EXPERIMENTAL-STUDY OF MISFIT DISLOCATIONS IN INP-BASED HETEROSTRUCTURES

被引：2

作者：

FRANZOSI, P ^{[1
]}

SCAFFARDI, M ^{[1
]}

GENOVA, F ^{[1
]}

RIGO, C ^{[1
]}

STANO, A ^{[1
]}

机构：

[1] CTR STUDI & LAB TELECOMMUN,I-10148 TURIN,ITALY

来源：

MATERIALS LETTERS | 1989年 / 7卷 / 11期

关键词：

D O I：

10.1016/0167-577X(89)90081-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：404 / 406

页数：3

共 10 条

[1]

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[4] ON THE LOCATION OF THE MISFIT DISLOCATIONS IN INGAAS/INP MBE SINGLE HETEROSTRUCTURES [J].

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[6] MOLECULAR-BEAM EPITAXY GROWTH OF IN0.53(GAXAL1-X)0.47AS QUATERNARY LAYERS FOR OPTOINTEGRATED DEVICES [J].

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[7]

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[9] MISFIT DISLOCATIONS IN INP/INGAASP/INP DOUBLE-HETEROSTRUCTURE WAFERS GROWN BY LIQUID-PHASE EPITAXY [J].

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[10]

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