MISFIT DISLOCATIONS IN INGAAS/INP MBE SINGLE HETEROSTRUCTURES

被引：21

作者：

FRANZOSI, P ^{[1
]}

SALVIATI, G ^{[1
]}

GENOVA, F ^{[1
]}

STANO, A ^{[1
]}

TAIARIOL, F ^{[1
]}

机构：

[1] CSELT,I-10148 TORINO,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 03期

关键词：

D O I：

10.1016/0022-0248(86)90098-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：521 / 534

页数：14

共 26 条

[1] OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS [J].

AKITA, K ;

KUSUNOKI, T ;

KOMIYA, S ;

KOTANI, T .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) :783-787

[2] ASYMMETRY OF MISFIT DISLOCATIONS IN HETEROEPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1977, 37 (03) :204-214

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1015-1021

[4]

COCITO M, 1986, SCANNING ELECTRON MI

[5] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

HECKINGBOTTOM, R ;

OHNO, H ;

WOOD, CEC ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292

[6] LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES [J].

FORREST, SR ;

CAMLIBEL, I ;

KIM, OK ;

STOCKER, HJ ;

ZUBER, JR .

ELECTRON DEVICE LETTERS, 1981, 2 (11) :283-285

[7] EFFECT OF INP SUBSTRATE THERMAL-DEGRADATION ON MBE INGAAS LAYERS [J].

GENOVA, F ;

PAPUZZA, C ;

RIGO, C ;

STANO, S .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :635-638

[8] GROWTH OF IN.53GA.47AS LAYERS ON INP SUBSTRATES FOR IR DETECTORS BY MBE [J].

GENOVA, F ;

RIGO, C ;

STANO, A .

MATERIALS CHEMISTRY AND PHYSICS, 1984, 11 (02) :135-144

[9]

HALLIWELL MAG, 1973, I PHSY C SER, V17, P98

[10] COMPOSITIONAL X-RAY TOPOGRAPHY [J].

HOWARD, JK ;

DOBROTT, RD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) :567-&

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