MISFIT DISLOCATIONS IN INGAAS/INP MBE SINGLE HETEROSTRUCTURES

被引：21

作者：

FRANZOSI, P ^{[1
]}

SALVIATI, G ^{[1
]}

GENOVA, F ^{[1
]}

STANO, A ^{[1
]}

TAIARIOL, F ^{[1
]}

机构：

[1] CSELT,I-10148 TORINO,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 03期

关键词：

D O I：

10.1016/0022-0248(86)90098-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：521 / 534

页数：14

共 26 条

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[25] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].

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[26] OBSERVATIONS OF DISLOCATIONS IN PHOSPHORUS-DIFFUSED SILICON BY X-RAY AND ETCHING TECHNIQUES [J].

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