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LOW-ENERGY HYDROGEN-ION IMPLANTATION IN SCHOTTKY-BARRIER CONTROL
被引:15
作者
:
SINGH, R
论文数:
0
引用数:
0
h-index:
0
SINGH, R
ASHOK, S
论文数:
0
引用数:
0
h-index:
0
ASHOK, S
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1985年
/ 47卷
/ 04期
关键词
:
D O I
:
10.1063/1.96133
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:426 / 428
页数:3
相关论文
共 13 条
[1]
SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE
ASHOK, S
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
ASHOK, S
MOGROCAMPERO, A
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
MOGROCAMPERO, A
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(02)
: 48
-
49
[2]
ASHOK S, 1984, J APPL PHYS, V56, P1237, DOI 10.1063/1.334058
[3]
THE PINCH RECTIFIER - A LOW-FORWARD-DROP HIGH-SPEED POWER DIODE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
BALIGA, BJ
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(06)
: 194
-
196
[4]
EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
FONASH, SJ
ASHOK, S
论文数:
0
引用数:
0
h-index:
0
ASHOK, S
SINGH, R
论文数:
0
引用数:
0
h-index:
0
SINGH, R
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(05)
: 423
-
425
[5]
GINLEY D, 1984, ELECTROCHEMICAL SOC
[6]
Green M. A., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P1405
[7]
MOLINE RA, 1971, 2ND P INT C ION IMPL
[8]
SHORT-TIME ANNEALING
SEDGWICK, TO
论文数:
0
引用数:
0
h-index:
0
SEDGWICK, TO
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(02)
: 484
-
493
[9]
CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(06)
: 537
-
543
[10]
A LOW-TEMPERATURE PROCESS FOR ANNEALING EXTREMELY SHALLOW AS+-IMPLANTED N+/P JUNCTIONS IN SILICON
SINGH, R
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
SINGH, R
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
FONASH, SJ
ROHATGI, A
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
ROHATGI, A
CHOUDHURY, PR
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
CHOUDHURY, PR
GIGANTE, J
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
GIGANTE, J
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(04)
: 867
-
870
←
1
2
→
共 13 条
[1]
SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE
ASHOK, S
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
ASHOK, S
MOGROCAMPERO, A
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
MOGROCAMPERO, A
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(02)
: 48
-
49
[2]
ASHOK S, 1984, J APPL PHYS, V56, P1237, DOI 10.1063/1.334058
[3]
THE PINCH RECTIFIER - A LOW-FORWARD-DROP HIGH-SPEED POWER DIODE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
BALIGA, BJ
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(06)
: 194
-
196
[4]
EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
FONASH, SJ
ASHOK, S
论文数:
0
引用数:
0
h-index:
0
ASHOK, S
SINGH, R
论文数:
0
引用数:
0
h-index:
0
SINGH, R
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(05)
: 423
-
425
[5]
GINLEY D, 1984, ELECTROCHEMICAL SOC
[6]
Green M. A., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P1405
[7]
MOLINE RA, 1971, 2ND P INT C ION IMPL
[8]
SHORT-TIME ANNEALING
SEDGWICK, TO
论文数:
0
引用数:
0
h-index:
0
SEDGWICK, TO
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(02)
: 484
-
493
[9]
CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(06)
: 537
-
543
[10]
A LOW-TEMPERATURE PROCESS FOR ANNEALING EXTREMELY SHALLOW AS+-IMPLANTED N+/P JUNCTIONS IN SILICON
SINGH, R
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
SINGH, R
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
FONASH, SJ
ROHATGI, A
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
ROHATGI, A
CHOUDHURY, PR
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
CHOUDHURY, PR
GIGANTE, J
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES & DEV CTR,PITTSBURGH,PA 15235
GIGANTE, J
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(04)
: 867
-
870
←
1
2
→