LOW-ENERGY HYDROGEN-ION IMPLANTATION IN SCHOTTKY-BARRIER CONTROL

[1] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 48 - 49

[2] ASHOK S, 1984, J APPL PHYS, V56, P1237, DOI 10.1063/1.334058

[3] THE PINCH RECTIFIER - A LOW-FORWARD-DROP HIGH-SPEED POWER DIODE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 194 - 196

[4] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 423 - 425

[5] GINLEY D, 1984, ELECTROCHEMICAL SOC

[6] Green M. A., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P1405

[7] MOLINE RA, 1971, 2ND P INT C ION IMPL

[8] SHORT-TIME ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 484 - 493

[9] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543

[10] A LOW-TEMPERATURE PROCESS FOR ANNEALING EXTREMELY SHALLOW AS+-IMPLANTED N+/P JUNCTIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 867 - 870

[1] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 48 - 49

[2] ASHOK S, 1984, J APPL PHYS, V56, P1237, DOI 10.1063/1.334058

[3] THE PINCH RECTIFIER - A LOW-FORWARD-DROP HIGH-SPEED POWER DIODE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 194 - 196

[4] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 423 - 425

[5] GINLEY D, 1984, ELECTROCHEMICAL SOC

[6] Green M. A., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P1405

[7] MOLINE RA, 1971, 2ND P INT C ION IMPL

[8] SHORT-TIME ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 484 - 493

[9] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543

[10] A LOW-TEMPERATURE PROCESS FOR ANNEALING EXTREMELY SHALLOW AS+-IMPLANTED N+/P JUNCTIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 867 - 870