POROUS SEMICONDUCTORS - WHY ONLY SILICON-BASED - A POSSIBLE EXPLANATION

被引：6

作者：

GORYACHEV, DN

BELYAKOV, LV

SRESELI, OM

YAROSHETSKII, ID

机构：

[1] A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 03期

关键词：

D O I：

10.1088/0268-1242/10/3/024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mechanism of formation of porous silicon under silicon anodization is discussed. A specific feature of silicon is emphasized, i.e. the ease of disproportionation of its doubly charged ions. A combination of two processes-etching of pores and secondary silicon recrystallization-is proposed to account for some features of porous silicon.

引用

页码：373 / 374

页数：2

共 9 条

[1]

ANDRIANOV AV, 1993, JETP LETT+, V58, P427

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].