ELECTRONIC-STRUCTURE OF SIO2 - REVIEW OF RECENT SPECTROSCOPIC AND THEORETICAL ADVANCES

被引：193

作者：

GRISCOM, DL ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1016/0022-3093(77)90046-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：155 / 234

页数：80

共 125 条

[21] AB-INITIO CALCULATIONS ON SILICATE ION, ORTHOSILICIC ACID AND THEIR L2,3 X-RAY-SPECTRA [J].

COLLINS, GAD ;

CRUICKSH.DW ;

BREEZE, A .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1972, 68 :1189-&

[22] ELECTRONIC DISTRIBUTION OF SIO BY X-RAY SPECTROSCOPY [J].

COSTALIMA, MT ;

SENEMAUD, C .

CHEMICAL PHYSICS LETTERS, 1976, 40 (01) :157-159

[23] On the emission spectra of some oxides and pure elements in the soft X-ray region [J].

Coster, D ;

Hof, S .

PHYSICA, 1940, 7 :655-668

[24]

Daniels J., 1970, SPRINGER TRACTS MODE, V54, P77

[25] BND EDGE OF AMORPHOUS SIO2 BY PHOTOINJECTION AND PHOTOCONDUCTIVITY MEASUREMENTS [J].

DISTEFANO, TH ;

EASTMAN, DE .

SOLID STATE COMMUNICATIONS, 1971, 9 (24) :2259-+

[26] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2 [J].

DISTEFANO, TH ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1560-+

[27] CHEMICAL BONDING STUDIES OF SILICATES AND OXIDES BY X-RAY K-EMISSION SPECTROSCOPY [J].

DODD, CG ;

GLEN, GL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5377-&

[28]

DOW JD, 1975, OPTICAL PROPERTIES H, P131

[29] PHOTOELECTRON-SPECTROSCOPY [J].

EASTMAN, DE ;

NATHAN, MI .

PHYSICS TODAY, 1975, 28 (04) :44-&

[30]

ELLIOT RJ, 1954, PHYS REV, V96, P130

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