UNIFORMITY OF 3-IN, SEMI-INSULATING, VERTICAL-GRADIENT-FREEZE GAAS WAFERS

被引：8

作者：

LOOK, DC

WALTERS, DC

MIER, MG

SEWELL, JS

SIZELOVE, JS

AKSELRAD, A

CLEMANS, JE

机构：

[1] USAF,AVION LAB,WRDC ELRA,WRIGHT PATTERSON AFB,OH 45433

[2] AT&T BELL LABS,ENGN RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.344458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1000 / 1002

页数：3

共 11 条

[1]

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[2]

CLEMANS JE, 1988, SEMI-INSULATING III-V MATERIALS, MALMO 1988, P423

[3] GAAS FIELD-EFFECT TRANSISTOR PROPERTIES, AS INFLUENCED BY THE LOCAL CONCENTRATIONS OF MIDGAP NATIVE DONORS AND DISLOCATIONS [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (06) :602-604

[4]

DUNCAN WM, 1987, I PHYS C SER, V83, P39

[5] A NOVEL APPLICATION OF THE VERTICAL GRADIENT FREEZE METHOD TO THE GROWTH OF HIGH-QUALITY III-V CRYSTALS [J].

GAULT, WA ;

MONBERG, EM ;

CLEMANS, JE .

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[6] EL2 DISTRIBUTIONS IN VERTICAL GRADIENT FREEZE GAAS CRYSTALS [J].

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SARGENT, L ;

BLAKEMORE, JS ;

PARSEY, JM ;

CLEMANS, JE .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) :5689-5693

[7] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[8] GROWTH AND PROPERTIES OF LARGE-DIAMETER INDIUM LATTICE-HARDENED GAAS CRYSTALS [J].

MCGUIGAN, S ;

THOMAS, RN ;

BARRETT, DL ;

ELDRIDGE, GW ;

MESSHAM, RL ;

SWANSON, BW .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :217-232

[9] PROXIMITY EFFECT OF DISLOCATIONS ON GAAS-MESFET THRESHOLD VOLTAGE [J].

MIYAZAWA, S ;

HYUGA, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :227-233

[10]

OTOKI Y, 1986, SEMIINSULATING 3 5 M, P285

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