OPTIMIZATION OF BREAKDOWN VOLTAGE AND ON-RESISTANCE OF VDMOS TRANSISTORS

被引：19

作者：

DARWISH, MN

BOARD, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期

关键词：

D O I：

10.1109/T-ED.1984.21786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1769 / 1773

页数：5

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