THE STEPWISE DISSOCIATION OF NH3 ON THE SI(111)-(7X7) SURFACE - LOW-TEMPERATURE DISSOCIATIVE ADSORPTION AND THERMAL EFFECTS

被引:43
作者
COLAIANNI, ML
CHEN, PJ
YATES, JT
机构
[1] Surface Science Center, Department of Chemistry, University of Pittsburgh, Pittsburgh
[2] Department of Physics, University of Pittsburgh, Pittsburgh
关键词
D O I
10.1063/1.462379
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The molecular and dissociative adsorption of NH3 on a clean Si(111)-(7 X 7) surface has been studied using high-resolution electron-energy-loss spectroscopy (HREELS), Auger electron spectroscopy, and temperature-programmed desorption (TPD). All NH(x) (3 greater-than-or-equal-to x greater-than-or-equal-to 1) species have been observed vibrationally under varying experimental conditions. Adsorbed molecular ammonia is observed by both HREELS and TPD below 200 K. The absence of a strong delta(s), (NH3) mode in our vibrational spectra suggests that NH3 is bound as a tilted species to the Si(111)-(7 X 7) surface. Ammonia exposures above 1.7 X 10(14) NH3/cm2 at 110 K populate a weakly bound NH3 (a) state which desorbs upon heating with a peak desorption temperature of 115 K. The NH2 (a) species is observed to form at 80 K at all coverages and exhibits an enhanced thermal stability at higher ammonia exposures. The NH(a) species is detected above 200 K by an energy-loss feature at 1100 cm-1, which we assign to the delta(NH) mode. NH(a) is stable to 750 K on high coverage layers. Finally, we observe an increase in the Si-H stretching frequency as the concentration of NH(a) and N(a) species is increased by heating.
引用
收藏
页码:7826 / 7837
页数:12
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  • [61] NI IMPURITY EFFECTS ON HYDROGEN SURFACE-CHEMISTRY AND ETCHING OF SI(111)
    WALLACE, RM
    CHENG, CC
    TAYLOR, PA
    CHOYKE, WJ
    YATES, JT
    [J]. APPLIED SURFACE SCIENCE, 1990, 45 (03) : 201 - 206
  • [62] THE ROLE OF THIN-FILMS IN INTEGRATED SOLID-STATE SENSORS
    WISE, KD
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 617 - 622
  • [63] ATOM-RESOLVED SURFACE-CHEMISTRY USING SCANNING TUNNELING MICROSCOPY
    WOLKOW, R
    AVOURIS, P
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (11) : 1049 - 1052