HOT-WALL EPITAXIAL-GROWTH OF PB1-XSNXTE HETERO-LAYERS FOR INFRARED DIODE-LASER DEVICES

被引：10

作者：

BRYANT, FJ ^{[1
]}

EKINUDDIN, M ^{[1
]}

REED, J ^{[1
]}

THOMAS, EL ^{[1
]}

机构：

[1] UNIV HULL,DEPT APPL PHYS,HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

INFRARED PHYSICS | 1982年 / 22卷 / 02期

关键词：

D O I：

10.1016/0020-0891(82)90024-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：97 / 107

页数：11

共 31 条

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[3]

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