IONIZING-RADIATION EFFECTS IN INP MISFETS

被引：3

作者：

ANDERSON, WT ^{[1
]}

DAVIS, GE ^{[1
]}

MATEER, JS ^{[1
]}

LILE, DL ^{[1
]}

机构：

[1] SACHS FREEMAN ASSOCIATES,BOWIE,MD

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1467 / 1470

页数：4

共 7 条

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ANDERSON, WT ;

BINARI, SC .

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[2] REDUCTION OF LONG-TERM TRANSIENT RADIATION RESPONSE IN ION-IMPLANTED GAAS-FETS [J].

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LAMBERT, RJ .

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[3] NEW MODEL FOR SLOW CURRENT DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

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HWANG, T ;

WILMSEN, CW .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :453-455

[4] RADIATION TOLERANCE OF NMOS TECHNOLOGY ON INDIUM-PHOSPHIDE [J].

LILE, DL ;

TAYLOR, MJ ;

MESSICK, LJ ;

ZEISSE, CR ;

COLLINS, DA .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :94-96

[5]

MESSICK L, 1983, DEC IEDM, P380

[6] IRRADIATED SILICON GATE MOS DEVICE BIAS ANNEALING [J].

SCHWANK, JR ;

DAWES, WR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4100-4104

[7] LONG-TERM RADIATION TRANSIENTS IN GAAS-FETS [J].

SIMONS, M ;

KING, EE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5080-5086

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