DIFFUSION OF HYDROGEN IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMS

被引：46

作者：

BIK, WMA ^{[1
]}

LINSSEN, RNH ^{[1
]}

HABRAKEN, FHPM ^{[1
]}

VANDERWEG, WF ^{[1
]}

KUIPER, AET ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期

关键词：

D O I：

10.1063/1.103261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen transport in low-pressure chemical vapor deposited Si 3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion coefficients for D were derived from the deuterium concentration depth profiles before and after annealing at temperatures in the range 700-1000°C. The diffusion coefficient is characterized by an activation energy of 2.94 eV for the entire temperature range. Its value varies between 10-17 cm2/s at 700°C and 5×10-14 cm2/s at 1000°C.

引用

页码：2530 / 2532

页数：3

共 9 条

[1] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J].