DESIGN, TECHNOLOGY, AND BEHAVIOR OF A SILICON AVALANCHE CATHODE

被引：11

作者：

HOEBERECHTS, AME

VANGORKOM, GGP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：105 / 107

页数：3

共 13 条

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[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO, P351

[9]

VANGORKOM GGP, 1986, J VAC SCI TECHNOL B, V4, P108, DOI 10.1116/1.583357

[10]

VANGORKOM GGP, 1984, PHILIPS J RES, V39, P51

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