A MODEL FOR BAND-GAP SHRINKAGE IN SEMICONDUCTORS WITH APPLICATION TO SILICON

被引：17

作者：

LANDSBERG, PT

NEUGROSCHEL, A

LINDHOLM, FA

SAH, CT

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 130卷 / 01期

关键词：

D O I：

10.1002/pssb.2221300125

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：255 / 266

页数：12

共 34 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].

ABRAM, RA ;

REES, GJ ;

WILSON, BLH .

ADVANCES IN PHYSICS, 1978, 27 (06) :799-892

[2] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J].

BALKANSKI, M ;

AZIZA, A ;

AMZALLAG, E .

PHYSICA STATUS SOLIDI, 1969, 31 (01) :323-+

[3] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&

[4] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

BERGGREN, KF ;

SERNELIUS, BE .

PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986

[5]

BONCH-BRUEVICH VL, 1965, FIZ TVERD TELA+, V6, P2016

[6]

BONCHBRUEVICH VL, 1966, ELECTRONIC THEORY HE

[7] BAND-GAP NARROWING FROM LUMINESCENCE IN P-TYPE SI [J].

DUMKE, WP .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3200-3202

[8] COMPARISON OF BAND-GAP SHRINKAGE OBSERVED IN LUMINESCENCE FROM N+-SI WITH THAT FROM TRANSPORT AND OPTICAL-ABSORPTION MEASUREMENTS [J].

DUMKE, WP .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :196-198

[9] BAND-GAP NARROWING IN N-SI AND N-GE - EFFECTS OF NON-LINEAR IMPURITY SCATTERING [J].

ENGSTROM, L .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (08) :1437-1449

[10]

FRITZSCHE H, 1978, 19TH P SCOTT SUMM SC

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