DEEP LEVELS IN SEMI-INSULATING LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS

被引：7

作者：

BURD, MR

BRAUNSTEIN, R

机构：

[1] Univ of California, Los Angeles, CA,, USA, Univ of California, Los Angeles, CA, USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1988年 / 49卷 / 07期

关键词：

HEAT TREATMENT - Annealing - SPECTROSCOPY - Applications;

D O I：

10.1016/0022-3697(88)90021-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Photo-induced transient spectroscopy (PITS) was performed on variously heat-treated samples of semi-insulating liquid encapsulated Czochralski-grown GaAs. Seven deep levels at 0. 57, 0. 52, 0. 42, 0. 36, 0. 27, 0. 22 and 0. 18 eV were observed. These levels can be identified with levels seen using other deep-level techniques and a variety of crystal growth and sample preparation techniques. The levels at 0. 52, 0. 42 and 0. 36 eV can be annealed out by heat treatment. These levels therefore seem to be associated with structural defects rather than impurities.

引用

页码：731 / 735

页数：5

共 11 条

[1]

BURD MR, 1984, THESIS U CALIFORNIA

[2] REEXAMINATION OF THE WAVELENGTH MODULATION PHOTORESPONSE SPECTROSCOPIES [J].