GROWTH OF A DELTA-DOPED SILICON LAYER BY MOLECULAR-BEAM EPITAXY ON A CHARGE-COUPLED DEVICE FOR REFLECTION-LIMITED ULTRAVIOLET QUANTUM EFFICIENCY

被引：80

作者：

HOENK, ME ^{[1
]}

GRUNTHANER, PJ ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

TERHUNE, RW ^{[1
]}

FATTAHI, M ^{[1
]}

TSENG, HF ^{[1
]}

机构：

[1] EG&G RETICON,SUNNYVALE,CA 94086

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 09期

关键词：

D O I：

10.1063/1.107675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used low-temperature silicon molecular beam epitaxy to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned EG&G Reticon CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450-degrees-C, contained a boron delta-layer with surface density approximately 2 X 10(14) cm-2. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

引用

页码：1084 / 1086

页数：3

共 18 条

[1]

[Anonymous], 1985, HDB OPTICAL CONSTANT

[2] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].