KINETICS OF LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN MICROSTRUCTURES

被引：2

作者：

AUVERT, G

PAULEAU, Y

TONNEAU, D

机构：

[1] ECOLE NATL SUPER ELECTROCHIM & ELECTROMET GRENOBLE,INST NATL POLYTECH GRENOBLE,F-38402 ST MARTIN DHERES,FRANCE

[2] SOC BERTIN,F-13762 LES MILLES,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 01期

关键词：

LASER; CHEMICAL VAPOR DEPOSITION; GROWTH KINETICS; SURFACE REACTION; FABRICATION OF FILMS;

D O I：

10.1143/JJAP.31.100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tungsten microstructures (dots, strips and films) have been deposited via H-2 reduction of WF6 on polycrystalline silicon-coated quartz substrates irradiated with a focused cw argon laser beam. The deposition rate of W dots, deduced from alpha-step measurements of the height of dots, was investigated as a function of irradiation time, composition of H-2-WF6 gas mixtures and laser-induced surface temperature. At a laser-induced surface temperature ranging from 340-degrees to 670-degrees-C with an H-2 partial pressure varying from 50 to 700 Torr, the reaction order with respect to H-2 was equal to one-half, whereas at higher temperatures (750-degrees-950-degrees-C) and lower H-2 partial pressures (20-80 Torr), the reaction order with respect to H-2 was found to be one. The reaction mechanism of the H-2 reduction of WF6 on substrates irradiated with the argon laser beam is discussed.

引用

页码：100 / 104

页数：5

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