DETERMINATION OF THE MOBILITY GAP IN AMORPHOUS-SILICON FROM A LOW-TEMPERATURE PHOTOCONDUCTIVITY MEASUREMENT

被引：18

作者：

VANECEK, M

STUCHLIK, J

KOCKA, J

TRISKA, A

机构：

[1] Czechoslovak Acad of Sciences, Prague, Czech, Czechoslovak Acad of Sciences, Prague, Czech

来源：

关键词：

D O I：

10.1016/0022-3093(85)90660-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：299 / 302

页数：4

共 11 条

[1] TRANSPORT-PROPERTIES OF COMPENSATED A-SI FILMS
BEYER, W
MELL, H
OVERHOF, H
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 103 - 106
[2] PHOTOGENERATION AND GEMINATE RECOMBINATION IN AMORPHOUS-SILICON
CARASCO, F
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : 495 - 507
[3] CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11
[4] CRANDALL RS, 1984, SEMICONDUCT SEMIMET, V21, P245
[5] FRITZSCHE H, 1984, SEMICONDUCT SEMIMET, V21, P309
[6] GELATOS AV, 1984, AIP C P, V120
[7] EFFECT OF BORON DOPING AND ITS PROFILE ON CHARACTERISTICS OF P-I-N A-SI-H SOLAR-CELLS
HARUKI, H
SAKAI, H
KAMIYAMA, M
UCHIDA, Y
[J]. SOLAR ENERGY MATERIALS, 1983, 8 (04): : 441 - 455
[8] PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF A-SI-H AT LOW-TEMPERATURE
HOHEISEL, M
CARIUS, R
FUHS, W
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 63 (03) : 313 - 319
[9] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON
JACKSON, WB
KELSO, SM
TSAI, CC
ALLEN, JW
OH, SJ
[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5187 - 5198
[10] TEMPERATURE-DEPENDENT FIELD-EFFECT CONDUCTANCE IN A-SI-H
JANG, J
LEE, C
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 281 - 284