ROLE OF INTERFACIAL OXIDE-RELATED DEFECTS IN THE RED-LIGHT EMISSION IN POROUS SILICON - COMMENT

被引：11

作者：

BANERJEE, S

机构：

[1] Tata Institute of Fundamental Research, Bombay 400005, Homi Bhabha Road

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.51.11180

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoluminescence intensity of porous silicon as a function of laser heating has been shown to have remarkable similarity with the high-temperature annealing behavior of one kind of nonbridging-oxygen-hole complex (NBOHC). It has been inferred by the authors that the 1.7-eV luminescence in porous silicon is due to NBOHC's. In view of more recent experiments, some basic differences between the emission and absorption properties of as-fabricated porous silicon and NBOHC's have been highlighted in this Comment. © 1995 The American Physical Society.

引用

页码：11180 / 11182

页数：3

共 18 条

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