A SIMPLE PARAMETER EXTRACTION METHOD FOR ULTRA-THIN OXIDE MOSFETS

被引：60

作者：

MCLARTY, PK

CRISTOLOVEANU, S

FAYNOT, O

MISRA, V

HAUSER, JR

WORTMAN, JJ

机构：

[1] ENSEEG, PHYS COMPOSANTS & SEMICOND LAB, CNRS UA, F-38016 GRENOBLE, FRANCE

[2] CEN GRENOBLE, DMEL, CEA TECHNOL AVANCES, LETI, F-38041 GRENOBLE, FRANCE

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 06期

关键词：

D O I：

10.1016/0038-1101(94)00248-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple parameter extraction technique is presented for ultra-thin oxide MOSFETs. The technique is based on a suitable MOSFET mobility model and extracts threshold voltage (V-t), mobility (mu(0)), and two mobility degradation parameters theta(1) and theta(2). It has been found that the extracted parameters accurately describe the measured current voltage characteristics for strong inversion.

引用

页码：1175 / 1177

页数：3

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