THE INVERSION LAYER OF SUBHALF-MICROMETER N-CHANNEL AND P-CHANNEL MOSFETS IN THE TEMPERATURE-RANGE 208-403-K

被引：9

作者：

WILDAU, HJ ^{[1
]}

BERNT, H ^{[1
]}

FRIEDRICH, D ^{[1
]}

SEIFERT, W ^{[1
]}

STAUDTFISCHBACH, P ^{[1
]}

WAGEMANN, HG ^{[1
]}

WINDBRACKE, W ^{[1
]}

机构：

[1] FRAUNHOFER INST MIKROSTRUKTURTECH,D-14109 BERLIN,GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期

关键词：

D O I：

10.1109/16.249481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Minority carrier mobility has been extracted from I-V measurements on N- and PMOS-transistors entirely processed by means of X-ray lithography with effective channel lengths down to 0.35 mu m. The measurements have been performed within the temperature range 208-403 K (-65 degrees C to + 130 degrees C). The accuracy of the mobility determination has been investigated, especially with regard to the determination of the effective channel length and the series resistance. The results indicate a significant mobility reduction for short-channel NMOS-devices at temperatures below 300 K. Furthermore, a slight increase of the threshold-voltage was observed in the short-channel region. Both effects can be required by an inhomogeneous lateral doping profile within the channel due to standard submicron technology, which was confirmed with two-dimensional device simulation.

引用

页码：2318 / 2325

页数：8

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