UNIVERSALITY OF MOBILITY-GATE FIELD CHARACTERISTICS OF ELECTRONS IN THE INVERSION CHARGE LAYER AND ITS APPLICATION IN MOSFET MODELING

被引：11

作者：

LEE, SW

机构：

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1989年 / 8卷 / 07期

关键词：

D O I：

10.1109/43.31529

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

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页码：724 / 730

页数：7

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共 19 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
FOWLER, AB
STERN, F
[J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
[2] A SEMIEMPIRICAL MODEL OF THE MOSFET INVERSION LAYER MOBILITY FOR LOW-TEMPERATURE OPERATION
ARORA, ND
GILDENBLAT, GS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 89 - 93
[3] CHEN N, 1984, MANUAL RUNNING CADDE
[4] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS
CHENG, YC
SULLIVAN, EA
[J]. SURFACE SCIENCE, 1973, 34 (03) : 717 - 731
[5] EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY
CHENG, YC
SULLIVAN, EA
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 187 - 192
[6] Engl W. L., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P85, DOI 10.1109/TCAD.1982.1269998
[7] DEVICE MODELING
ENGL, WL
DIRKS, HK
MEINERZHAGEN, B
[J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33
[8] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS
HARTSTEIN, A
NING, TH
FOWLER, AB
[J]. SURFACE SCIENCE, 1976, 58 (01) : 178 - 181
[9] VLSI PROCESS MODELING - SUPREM-III
HO, CP
PLUMMER, JD
HANSEN, SE
DUTTON, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1438 - 1453
[10] A COMPACT IGFET MODEL - ASIM
LEE, SW
RENNICK, RC
[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (09) : 952 - 975