DEPENDENCE OF ELECTRON-MOBILITY ON SPACER THICKNESS AND ELECTRON-DENSITY IN MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS

被引：10

作者：

HSIEH, KH

OHNO, H

WICKS, G

EASTMAN, LF

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 05期

关键词：

D O I：

10.1049/el:19830112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：160 / 162

页数：3

共 10 条

[1] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

DRUMMOND, TJ ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :147-149

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[3] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

KEEVER, M ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1023-1028

[4] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J].

KASTALSKY, A ;

DINGLE, R ;

CHENG, KY ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :274-277

[5] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

OHNO, H ;

WOOD, CEC ;

RATHBUN, L ;

MORGAN, DV ;

WICKS, GW ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4033-4037

[6] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP [J].

OLIVER, JD ;

EASTMAN, LF .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :693-712

[7]

STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604

[8] INFLUENCE OF AN UNDOPED (ALGA)AS SPACER ON MOBILITY ENHANCEMENT IN GAAS-(ALGA)AS SUPER-LATTICES [J].

STORMER, HL ;

PINCZUK, A ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :691-693

[9]

TANOUE T, 1982, 2ND INT S MBE REL SU, P143

[10] EXTREMELY HIGH ELECTRON MOBILITIES IN MODULATION-DOPED GAAS-ALXGA1-XAS HETEROJUNCTION SUPER-LATTICES [J].

WANG, WI ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1981, 17 (01) :36-37

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