X-RAY-DIFFRACTION EVIDENCE FOR TRANSIENT COMPOSITION EFFECTS IN MOVPE MULTILAYER GROWTH FOR GA1-XALXAS ALLOYS

被引：9

作者：

BENSOUSSAN, S

MALGRANGE, C

SAUVAGESIMKIN, M

NGUESSAN, K

GIBART, P

机构：

[1] UNIV PARIS 07,CNRS,MINERAL CRISTALLOG LAB,F-75252 PARIS 05,FRANCE

[2] UNIV PARIS 11,MEN,CEA,CNRS,UTILISAT RAYONNMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

[3] CNRS,PHYS SOLIDES & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 1987年 / 20卷

关键词：

D O I：

10.1107/S0021889887086795

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：230 / 234

页数：5

共 7 条

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[2] SENSITIVITY OF X-RAY-DIFFRACTOMETRY FOR STRAIN DEPTH PROFILING IN III-V HETEROSTRUCTURES [J].

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[3] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES [J].

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[4] SIMULATION OF X-RAY DOUBLE-CRYSTAL ROCKING CURVES OF MULTIPLE AND INHOMOGENEOUS HETEROEPITAXIAL LAYERS [J].

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[5]

NGUESSAN K, 1986, THESIS U NICE FRANCE

[6] COMPOSITIONAL TRANSIENTS IN MOCVD GROWN III-V-HETEROSTRUCTURES [J].

THRUSH, EJ ;

WHITEAWAY, JEA ;

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CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :412-421

[7]

WILLIAMSON DL, 1987, UNPUB J APPL PHYS

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