GRAIN-GROWTH STUDIES IN POLYSILICON BY AR-40 ION-IMPLANTATION AND THERMAL ANNEALING

被引：8

作者：

BHATTACHARYYA, A

RITZ, KN

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 09期

关键词：

D O I：

10.1149/1.2116037

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2143 / 2145

页数：3

共 9 条

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