DOPING EFFICIENCY IN RF-SPUTTERED HYDROGENATED AMORPHOUS-SILICON

被引：4

作者：

JOUSSE, D

BRUYERE, JC

BUSTARRET, E

DENEUVILLE, A

机构：

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1987年 / 55卷 / 01期

关键词：

D O I：

10.1080/09500838708210438

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：41 / 46

页数：6

共 19 条

[1]

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[7]

JOUSSE D, 1986, IN PRESS PHYS REV B, V34

[8] THEORY OF DEFECT FORMATION IN THE GLOW-DISCHARGE DEPOSITION OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

KAMPAS, FJ ;

VANIER, PE .

PHYSICAL REVIEW B, 1985, 31 (06) :3654-3658

[9] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

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[10] ELECTRONS IN DISORDERED STRUCTURES [J].

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