DISORDER AND DEFECTS IN SPUTTERED A-SIH FROM SUBGAP ABSORPTION-MEASUREMENTS

被引：41

作者：

JOUSSE, D ^{[1
]}

BUSTARRET, E ^{[1
]}

BOULITROP, F ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 55卷 / 05期

关键词：

D O I：

10.1016/0038-1098(85)90844-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：435 / 438

页数：4

共 23 条

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[8] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].

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[9]

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[10] DEEP-LEVEL SPECTROSCOPY OF REACTIVELY SPUTTERED A-SI-H FILMS [J].

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