OPTICAL AND ELECTRICAL-PROPERTIES OF THE ALXGA1-XAS/GAAS SINGLE HETEROJUNCTIONS GROWN BY LOW-PRESSURE MOVPE

被引：3

作者：

GUIMARAES, FEG ^{[1
]}

GYURO, I ^{[1
]}

SCHEFFER, F ^{[1
]}

HEUKEN, M ^{[1
]}

HEIME, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90499-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Low temperature photoluminescence (PL) and device transport properties of undoped Al(x)Ga1-(x)As/GaAs single heterojunctions grown by MOVPE are investigated. The dependence of these properties on the Al content (0.22 less-than-or-equal-to x less-than-or-equal-to 0.52) and growth temperature has been studied. An unusual emission band is observed in the GaAs band-edge spectral region (1.500-1.511 eV) for samples having higher Al concentration. Based on temperature dependent measurements, we assign this emission band to excitons bound either to defects having their origin in residual impurities in the GaAs active layer or to intrinsic defects originated by the introduction of the Al(x)Ga1-(x)As/GaAs heterojunction.

引用

页码：434 / 439

页数：6

共 14 条

[1] PHOTOLUMINESCENCE STUDY ON THE INTERFACE OF A GAAS/ALXGA1-XAS HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

AKIMOTO, K ;

TAMAMURA, K ;

OGAWA, J ;

MORI, Y ;

KOJIMA, C .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) :460-464

[2]

ALTUKHOV PD, 1987, SOV PHYS SEMICOND+, V21, P279

[3] A MODEL FOR SOME DEFECT-RELATED BOUND EXCITON LINES IN THE PHOTOLUMINESCENCE SPECTRUM OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

EAVES, L ;

HALLIDAY, DP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (27) :L705-L709

[4]

GUIMARAES FEG, 1990, I PHYS C SER, V106

[5] PHOTOCOLLECTION EFFICIENCY AND INTERFACE CHARGES OF MBE-GROWN ABRUPT P(GAAS)-N(AL0.33GA0.67AS) HETEROJUNCTIONS [J].

KROEMER, H ;

CHIEN, WY ;

CASEY, HC ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :749-751

[6]

KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[7] SCANNING-TRANSMISSION ELECTRON-MICROSCOPY OF HETEROINTERFACES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE) [J].

LAKNER, H ;

BOLLIG, B ;

KUBALEK, E ;

HEUKEN, M ;

HEIME, K ;

SCHEFFER, F ;

GUIMARAES, FEG .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :452-457

[8] INTERFACE STATES IN GAAS/ALXGA1-XAS HETEROSTRUCTURES GROWN BY ORGANO-METALLIC VAPOR-PHASE EPITAXY [J].

MATSUMOTO, T ;

BHATTACHARYA, PK ;

LUDOWISE, MJ .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :52-54

[9] OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS ALXGA1-X AS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY [J].

MCAFEE, SR ;

LANG, DV ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :520-522

[10] LUMINESCENCE PROPERTIES OF GAAS-GA1-XALX AS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPER-LATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

WEISBUCH, C ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :965-967

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