SCANNING-TRANSMISSION ELECTRON-MICROSCOPY OF HETEROINTERFACES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE)

被引：12

作者：

LAKNER, H ^{[1
]}

BOLLIG, B ^{[1
]}

KUBALEK, E ^{[1
]}

HEUKEN, M ^{[1
]}

HEIME, K ^{[1
]}

SCHEFFER, F ^{[1
]}

GUIMARAES, FEG ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90502-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper we report on the influence of a superlattice (SL) buffer layer and the growth conditions on AlGaAs/GaAs heterojunction properties such as the interface abruptness and interface roughness. The characterization was performed in a field-emission scanning transmission electron microscope (STEM) and by low temperature photoluminescence (PL). By means of STEM micrographs we find that the abruptness and roughness of quantum wells (QW) with and without SL buffer layer is of equal quality. The dramatically improved PL properties of samples with SL buffer layers show that the impurity density in the active layer is strongly reduced by the SL.

引用

页码：452 / 457

页数：6

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