MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON

被引：85

作者：

ASSALI, LVC

LEITE, JR

机构：

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 55卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.55.980

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：980 / 982

页数：3

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[21] DEACTIVATION OF THE BORON ACCEPTOR IN SILICON BY HYDROGEN
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[26] HYPERFINE INTERACTION BETWEEN HYDROGENS AND DANGLING BONDS IN A-SI-H STUDIED BY ENDOR
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[27] [No title captured]