STUDY OF WAVELENGTH SHIFT IN INGAAS/INA1GAAS QW DFB LASERS BASED ON LASER PARAMETERS FROM A COMPARISON OF EXPERIMENT AND THEORY

被引：10

作者：

HILLMER, H ^{[1
]}

HANSMANN, S ^{[1
]}

BURKHARD, H ^{[1
]}

WALTER, H ^{[1
]}

KROST, A ^{[1
]}

BIMBERG, D ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 10期

关键词：

D O I：

10.1109/3.328602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental data of InGaAs/InAlGaAs quantum well distributed feedback (DFB) lasers such as spectra, under continuous and pulsed biasing, relative intensity noise and linewidth, are compared with the results of model calculations based on a transfer matrix method. Using experimental data of different lasers, a set of physical DFB laser parameters was determined. We succeeded in describing all the experimental data of different lasers by the same set. The determined parameter set was further applied to study the influence of facet properties on the wavelength shift of DFB lasers. We found a very strong dependence of the wavelength tunability on the end facet phases. The wavelength shift varies by a factor up to three between different end facet phases and coatings. This is crucial for the yield of, for example, tunable multisection DFB lasers with an envisaged large tuning range.

引用

页码：2251 / 2261

页数：11

共 30 条

[1] MODELING OF DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS WITH AXIALLY-VARYING PARAMETERS [J].

AGRAWAL, GP ;

BOBECK, AH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) :2407-2414

[2] INFLUENCE OF INHOMOGENEOUS INJECTION ON SIDEMODE SUPPRESSION IN STRONGLY COUPLED DFB SEMICONDUCTOR-LASERS [J].

BANDELOW, U ;

WENZEL, H ;

WUNSCHE, HJ .

ELECTRONICS LETTERS, 1992, 28 (14) :1324-1326

[3] 1ST DFB GRIN-SCH GAINAS/AIGAINAS 1.55-MU-M MBE MQW ACTIVE LAYER BURIED RIDGE STRUCTURE LASERS [J].

BLEZ, M ;

KAZMIERSKI, C ;

QUILLEC, M ;

ROBEIN, D ;

ALLOVON, M ;

GLOUKHIAN, A ;

SERMAGE, B .

ELECTRONICS LETTERS, 1991, 27 (01) :93-95

[4]

BORCHERT B, 1992, 12TH INT C SEM LAS

[5] HIGH-FREQUENCY CONSTRICTED MESA LASERS [J].

BOWERS, JE ;

HEMENWAY, BR ;

GNAUCK, AH ;

BRIDGES, TJ ;

BURKHARDT, EG ;

WILT, DP ;

MAYNARD, S .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :78-80

[6] 1.54-MU-M PHASE-ADJUSTED INGAASP/INP DISTRIBUTED FEEDBACK LASERS WITH MASS-TRANSPORTED WINDOWS [J].

BROBERG, B ;

KOENTJORO, S ;

FURUYA, K ;

SUEMATSU, Y .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :4-6

[7] 3-LAYER AND 4-LAYER LPE INGAAS(P) MUSHROOM STRIPE LASERS FOR LAMBDA = 130, 154, AND 166-MUM [J].

BURKHARD, H ;

KUPHAL, E .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :650-657

[8]

GOBEL R, 1993, J CRYST GROWTH, V128, P5516

[9]

GOBEL R, 1992, 7TH P C SEM 3 5 MAT, P125

[10] LOW NONLINEAR GAIN IN INGAAS/INGAALAS SEPARATE CONFINEMENT MULTIQUANTUM WELL LASERS [J].

GRABMAIER, A ;

HANGLEITER, A ;

FUCHS, G ;

WHITEAWAY, JEA ;

GLEW, RW .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :3024-3026

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