STRUCTURAL STUDY OF ALLOYED GOLD METALLIZATION CONTACTS ON INGAASP/INP LAYERS

被引：33

作者：

VANDENBERG, JM

TEMKIN, H

HAMM, RA

DIGIUSEPPE, MA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.330364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：7385 / 7389

页数：5

相关论文

共 13 条

[1] REPRODUCIBLE PREPARATION OF TWIN-FREE INP CRYSTALS USING THE LEC TECHNIQUE
BONNER, WA
[J]. MATERIALS RESEARCH BULLETIN, 1980, 15 (01) : 63 - 72
[2] OHMIC CONTACTS FOR GAAS DEVICES
COX, RH
STRACK, H
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +
[3] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
NAGAI, H
NOGUCHI, Y
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 234 - 236
[4] CONTACT RESISTANCE DEPENDENCE ON INGAASP LAYERS LATTICE-MATCHED TO INP
NAKANO, Y
TAKAHASHI, S
TOYOSHIMA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) : L495 - L497
[5] PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P196
[6] ON THE FORMATION OF BINARY COMPOUNDS IN AU-INP SYSTEM
PIOTROWSKA, A
AUVRAY, P
GUIVARCH, A
PELOUS, G
HENOC, P
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5112 - 5117
[7] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M
POLLACK, MA
NAHORY, RE
DEWINTER, JC
BALLMAN, AA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 314 - 316
[8] OHMIC CONTACTS TO P-GAAS WITH AU-ZN-AU STRUCTURE
SANADA, T
WADA, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) : L491 - L494
[9] OHMIC CONTACTS TO PARA-TYPE INP USING BE-AU METALLIZATION
TEMKIN, H
MCCOY, RJ
KERAMIDAS, VG
BONNER, WA
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 444 - 446
[10] IN0.53GA0.47AS CONTACT LAYER FOR 1.3 UM LIGHT-EMITTING-DIODES
TEMKIN, H
CHIN, AK
DIGIUSEPPE, MA
[J]. ELECTRONICS LETTERS, 1981, 17 (19) : 703 - 705