ETCHING CHARACTERISTICS FOR ORGANOSILICA

[1] ENDO N, 1980, IEEE T ELECTRON DEV, V27, P1346, DOI 10.1109/T-ED.1980.20038

[2] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[3] HAVAS J, 1976, ELECTROCHEM SOC EXTE, V76, P743

[4] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1620 - 1624

[5] SPIN-ON GLASS AS AN INTERMEDIATE LAYER IN A TRI-LAYER RESIST PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2152 - 2154

[6] ELECTRON BEAM EXPOSURE OF SILICONES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 94 - &

[1] ENDO N, 1980, IEEE T ELECTRON DEV, V27, P1346, DOI 10.1109/T-ED.1980.20038

[2] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[3] HAVAS J, 1976, ELECTROCHEM SOC EXTE, V76, P743

[4] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1620 - 1624

[5] SPIN-ON GLASS AS AN INTERMEDIATE LAYER IN A TRI-LAYER RESIST PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2152 - 2154

[6] ELECTRON BEAM EXPOSURE OF SILICONES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 94 - &