SELECTIVE CHEMICAL ETCHING OF INP OVER INALAS

被引：13

作者：

HE, Y

LIANG, BW

TIEN, NC

TU, CW

机构：

[1] University of California at San Diego, Department of Electrical and Computer Engineering, La Jolla

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 07期

关键词：

D O I：

10.1149/1.2221172

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the selective chemical etching of InP/InAlAs heterostructures. The selectivity of InP over InAlAs by 1:1:2 of HCl:H3PO4:CH3COOH is above 85. Better-defined mesa etching patterns, however, are obtained by a solution with lower CH3COOH content such as 1:1:1 with a selectivity of 34. The etching recipe reported here is promising for InP-based heterostructure device applications.

引用

页码：2046 / 2048

页数：3

共 7 条

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