MICROSTRUCTURE OF VISIBLE-LIGHT EMITTING POROUS SILICON

被引：42

作者：

NISHIDA, A

NAKAGAWA, K

KAKIBAYASHI, H

SHIMADA, T

机构：

[1] Central Research Laboratory, Hitachi Ltd, Kokubunji Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9A期

关键词：

POROUS SI; PARTICLES; HR-SEM; HR-TEM; LATTICE IMAGE; QUANTUM SIZE EFFECT;

D O I：

10.1143/JJAP.31.L1219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relationship between the microstructure and photoluminescence of porous Si is investigated. High-resolution scanning electron microscopy shows that porous Si has a small-particle structure, with particle sizes ranging from several nm to several tens of nm. Transmission electron microscopy shows that these particles are composed of single-crystal Si spheres covered with an oxide layer. Porous Si with larger particles emits light with longer wavelengths. This suggests that the effective photoluminescence of porous Si is due to three-dimensional carrier confinement in quantum boxes.

引用

页码：L1219 / L1222

页数：4

共 8 条

[1] MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON
BEALE, MIJ
CHEW, NG
UREN, MJ
CULLIS, AG
BENJAMIN, JD
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 86 - 88
[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[3] PREFERENTIAL PROPAGATION OF PORES DURING THE FORMATION OF POROUS SILICON - A TRANSMISSION ELECTRON-MICROSCOPY STUDY
CHUANG, SF
COLLINS, SD
SMITH, RL
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (07) : 675 - 677
[4] FUCHS HD, IN PRESS MATER RES S
[5] KOSHIDA N, 1992, JPN J APPL PHYS, V60, P1
[6] PHOTOELECTROCHEMICAL EFFECTS OF SURFACE MODIFICATION OF N-TYPE SI WITH POROUS LAYER
KOYAMA, H
KOSHIDA, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) : 254 - 260
[7] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT
LEHMANN, V
GOSELE, U
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (08) : 856 - 858
[8] FINE-STRUCTURE OF POROUS SI WITH VISIBLE PHOTOLUMINESCENCE
NAKAGAWA, K
NISHIDA, A
SHIMADA, T
YAMAGUCHI, H
EGUCHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B): : L515 - L517

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