ALUMINUM OXIDE SILICON DIOXIDE, DOUBLE-INSULATOR, MOS STRUCTURE

被引：6

作者：

CLEMENS, JT ^{[1
]}

LABUDA, EF ^{[1
]}

BERGLUND, CN ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1975年 / 54卷 / 04期

关键词：

D O I：

10.1002/j.1538-7305.1975.tb02861.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：687 / 719

页数：33

共 20 条

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POWELL, RJ
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[3] CLEMENS JT, 1973, SEMICONDUCTOR SILICO, P779
[4] CURRY JJ, 1970, 8 ANN P REL PHYS, P29
[5] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
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[6] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
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GROVE, AS
SNOW, EH
SAH, CT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &
[7] SURFACE CHARGE AFTER ANNEALING OF AL-SIO2-SI STRUCTURES UNDER BIAS
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NIGH, HE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1454 - +
[8] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[9] GROVE AS, 1967, PHYS TECHNOL S, pCH9
[10] Hammer R., 1970, Review of Scientific Instruments, V41, P292, DOI 10.1063/1.1684503