CHARGE-TRANSFER VIA INTERFACE STATES AT POLYCRYSTALLINE CADMIUM SELENIDE ELECTRODES

被引:10
作者
HAAK, R [1 ]
TENCH, D [1 ]
RUSSAK, M [1 ]
机构
[1] GRUMMAN AEROSP CORP,BETHPAGE,NY 11714
关键词
D O I
10.1149/1.2115388
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2709 / 2714
页数:6
相关论文
共 13 条
[1]   CHARACTERIZATION OF THE INTERFACE ENERGETICS FOR N-TYPE CADMIUM SELENIDE NON-AQUEOUS ELECTROLYTE JUNCTIONS [J].
ARUCHAMY, A ;
BRUCE, JA ;
TANAKA, S ;
WRIGHTON, MS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :359-364
[2]   THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].
BARD, AJ ;
BOCARSLY, AB ;
FAN, FRF ;
WALTON, EG ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677
[3]  
BRILLSON LJ, 1977, SURF SCI, V69, P62, DOI 10.1016/0039-6028(77)90162-5
[4]  
De Levie R., 1967, ADV ELECTROCHEMISTRY, V6, P329
[5]   CAPACITANCE-VOLTAGE STUDIES ON ETCHED AND ANODIZED SINGLE-CRYSTAL NORMAL-CDSE [J].
FRESE, KW .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1571-1576
[6]   CADMIUM SELENIDE INTERFACE STATES STUDIED BY ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY [J].
HAAK, R ;
TENCH, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1442-1444
[7]   ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY METHOD FOR CHARACTERIZATION OF DEEP LEVELS AND INTERFACE STATES IN SEMICONDUCTOR-MATERIALS [J].
HAAK, R ;
TENCH, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :275-283
[8]   ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY - A NEW METHOD FOR CHARACTERIZATION OF DEEP LEVELS IN SEMICONDUCTORS [J].
HAAK, R ;
OGDEN, C ;
TENCH, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :891-893
[9]   SOLAR CONVERSION EFFICIENCY OF PRESSURE SINTERED CADMIUM SELENIDE LIQUID JUNCTION CELLS [J].
MILLER, B ;
HELLER, A ;
ROBBINS, M ;
MENEZES, S ;
CHANG, KC ;
THOMSON, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1019-1021