PROCESS TECHNIQUES OF 15-INCH FULL-COLOR HIGH-RESOLUTION LIQUID-CRYSTAL DISPLAYS ADDRESSED BY A-SI THIN-FILM TRANSISTORS

被引：5

作者：

FUJII, K ^{[1
]}

TANAKA, Y ^{[1
]}

HONDA, K ^{[1
]}

TSUTSU, H ^{[1
]}

KOSEKI, H ^{[1
]}

HOTTA, S ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,DIV CORP PROD ENGN,KADOMA,OSAKA 571,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

A-SI TFT; CONTACT RESISTIVITY; TI; TAOX; DRY ETCHING;

D O I：

10.1143/JJAP.31.4574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 15 inch-diagonal-size full-color liquid crystal display (LCD) with 1152(x 3) x 900 pixels has been fabricated which enables a portable workstation with improved display performances. The process techniques used for this development are described, with special reference to metallization and dry etching. In multilevel metallization, Cr/Al interconnection is metallurgically undesirable. By contrast, the Cr/Ti/Al metal system provides excellent properties of contact resistivity and thermodynamical stability. Dry etching processes are developed for multilayered insulating films and metallization-related bilayers, namely SiO2/TaOx/SiNx/(i/n+)a-Si and a-Si/Ti, respectively. Fine patterning and easier stepcoverage of subsequently deposited layers are achieved.

引用

页码：4574 / 4578

页数：5

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