THEORY OF CHARGE-STATE SPLITTINGS OF DEEP LEVELS

被引：32

作者：

LEE, S ^{[1
]}

DOW, JD ^{[1
]}

SANKEY, OF ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.31.3910

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3910 / 3914

页数：5

共 22 条

[1] [Anonymous], ELECTRONIC STRUCTURE
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[3] ELECTRONIC-STRUCTURE OF DEEP SP-BONDED SUBSTITUTIONAL IMPURITIES IN SILICON
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[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
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[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
[5] EXCITED-STATES AT DEEP CENTERS IN SI-S AND SI-SE
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[6] TELLURIUM DONORS IN SILICON
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[J]. PHYSICAL REVIEW B, 1981, 24 (08) : 4571 - 4586
[7] MULTIVALLEY SPIN SPLITTING OF 1S STATES FOR SULFUR, SELENIUM, AND TELLURIUM DONORS IN SILICON
GRIMMEISS, HG
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LARSSON, K
[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2627 - 2632
[8] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS
HALDANE, FDM
ANDERSON, PW
[J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2553 - 2559
[9] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS
HJALMARSON, HP
VOGL, P
WOLFORD, DJ
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[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 810 - 813
[10] HJALMARSON HP, 1979, THESIS U ILLINOIS UR

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