Properties of epitaxially grown CdTe layers doped with indium

被引：13

作者：

Karczewski, G ^{[1
]}

Zakrzewski, AK ^{[1
]}

Dobaczewski, L ^{[1
]}

Dobrowolski, W ^{[1
]}

Grodzicka, E ^{[1
]}

Jaroszynski, J ^{[1
]}

Wojtowicz, T ^{[1
]}

Kossut, J ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

来源：

THIN SOLID FILMS | 1995年 / 267卷 / 1-2期

关键词：

molecular beam epitaxy; cadmium telluride; conductivity; schottky barrier;

D O I：

10.1016/0040-6090(95)06628-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the growth and characterization of n-type indium-doped CdTe films grown by molecular beam epitaxy on GaAs substrates. By varying the In flux we are able to control the carrier concentration in the range from 8 x 10(14) to 1.5 X 10(18) cm(-3). The samples have been investigated by photoluminescence, transport, and deep level transient spectroscopy (DLTS) measurements. By DLTS we established that the concentration of the dominant electron trap, located at 0.45 eV below the edge of the conduction band, is proportional to the net donor concentration. This result indicates that the trap may be related to the presence of indium dopants.

引用

收藏

页码：79 / 83

页数：5

相关论文

共 24 条

[1] STRUCTURAL AND ELECTRICAL NONUNIFORMITIES IN THIN CDTE LAYERS GROWN ON INSB BY MBE [J].

ASHENFORD, D ;

DEVINE, P ;

HOGG, JHC ;

LUNN, B ;

SCOTT, CG .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 :S245-S250

[2] INDIUM DOPING OF CDTE AND CD1-XZNXTE BY MOLECULAR-BEAM EPITAXY - UNIFORMLY AND PLANAR-DOPED LAYERS, QUANTUM-WELLS, AND SUPERLATTICES [J].

BASSANI, F ;

TATARENKO, S ;

SAMINADAYAR, K ;

MAGNEA, N ;

COX, RT ;

TARDOT, A ;

GRATTEPAIN, C .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :2927-2940

[3] DONOR ACTIVATION EFFICIENCY AND DOPING PROFILE QUALITY IN IN-DOPED CDTE AND CDZNTE QUANTUM STRUCTURES [J].

BASSANI, F ;

TATARENKO, S ;

SAMINADAYAR, K ;

GRATTEPAIN, C .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3) :207-210

[4] LUMINESCENCE CHARACTERIZATION OF CDTE-IN GROWN BY MOLECULAR-BEAM EPITAXY [J].

BASSANI, F ;

TATARENKO, S ;

SAMINADAYAR, K ;

BLEUSE, J ;

MAGNEA, N ;

PAUTRAT, JL .

APPLIED PHYSICS LETTERS, 1991, 58 (23) :2651-2653

[5] INDIUM DOPING OF CDTE LAYERS AND CDTE/CD1-XZNXTE MICROSTRUCTURES [J].

BASSANI, F ;

SAMINADAYAR, K ;

TATARENKO, S ;

KHENG, K ;

COX, RT ;

MAGNEA, N ;

GRATTEPAIN, C .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :391-395

[6] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

GILES, NC ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1095-1097

[7] SHALLOW DONORS IN CDTE [J].

FRANCOU, JM ;

SAMINADAYAR, K ;

PAUTRAT, JL .

PHYSICAL REVIEW B, 1990, 41 (17) :12035-12046

[8] LATTICE-DYNAMICS OF CD-RICH CD1-XHGXTE ALLOYS [J].

HOCLET, M ;

PLUMELLE, P ;

VANDEVYVER, M ;

TRIBOULET, R ;

MARFAING, Y .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (02) :545-549

[9] CHLORINE - A NEW EFFICIENT NORMAL-TYPE DOPANT IN CDTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

HOMMEL, D ;

WAAG, A ;

SCHOLL, S ;

LANDWEHR, G .

APPLIED PHYSICS LETTERS, 1992, 61 (13) :1546-1548

[10] HOT WALL EPITAXY OF II-VI-COMPOUNDS - CDS AND CDTE [J].

HUMENBERGER, J ;

SITTER, H ;

HUBER, W ;

SHARMA, NC ;

LOPEZOTERO, A .

THIN SOLID FILMS, 1982, 90 (01) :101-105