Properties of epitaxially grown CdTe layers doped with indium

被引：13

作者：

Karczewski, G ^{[1
]}

Zakrzewski, AK ^{[1
]}

Dobaczewski, L ^{[1
]}

Dobrowolski, W ^{[1
]}

Grodzicka, E ^{[1
]}

Jaroszynski, J ^{[1
]}

Wojtowicz, T ^{[1
]}

Kossut, J ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

来源：

THIN SOLID FILMS | 1995年 / 267卷 / 1-2期

关键词：

molecular beam epitaxy; cadmium telluride; conductivity; schottky barrier;

D O I：

10.1016/0040-6090(95)06628-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the growth and characterization of n-type indium-doped CdTe films grown by molecular beam epitaxy on GaAs substrates. By varying the In flux we are able to control the carrier concentration in the range from 8 x 10(14) to 1.5 X 10(18) cm(-3). The samples have been investigated by photoluminescence, transport, and deep level transient spectroscopy (DLTS) measurements. By DLTS we established that the concentration of the dominant electron trap, located at 0.45 eV below the edge of the conduction band, is proportional to the net donor concentration. This result indicates that the trap may be related to the presence of indium dopants.

引用

页码：79 / 83

页数：5

共 24 条

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[12] ANNEALING OF INDIUM-IMPLANTED CDTE [J].