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DONOR ACTIVATION EFFICIENCY AND DOPING PROFILE QUALITY IN IN-DOPED CDTE AND CDZNTE QUANTUM STRUCTURES

被引：3
作者：
BASSANI, F
TATARENKO, S
SAMINADAYAR, K
GRATTEPAIN, C
机构：
[1] CEN,DRFMC,SPMM,PHYS SEMICOND LAB,F-38041 GRENOBLE,FRANCE
[2] CNRS,PHYS SOLIDES BELLEVUE LAB,F-92195 MEUDON,FRANCE
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期
关键词：
D O I：
10.1016/0921-5107(93)90045-O
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In-doping of CdTe and Cd1-xZnxTe (x < 20%) layers and quantum structures is performed during molecular beam epitaxy with a Cd overpressure. The In flux is determined as a function of the cell temperature. The role of the Cd overpressure in the activation efficiency is studied. Carrier mobilities of up to 5300 cm2 V-1 s-1 are observed at light doping levels. In migration and formation of In-related compounds are studied by X-ray photoelectron spectroscopy. The doping profile quality is studied by secondary ion mass spectroscopy: efficient, well localized doping is achieved for low growth temperatures (200-220-degres-C) and low sheet densities (about 10(11) cm-2); otherwise marked migration of the dopant is observed.
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收藏
页码：207 / 210
页数：4
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