STUDY OF GAAS MBE GROWTH UNDER GA-RICH CONDITIONS BY RHEED INTENSITY OSCILLATIONS

被引:16
作者
BOSACCHI, A [1 ]
FRANCHI, S [1 ]
KANTER, YO [1 ]
CHIKICHEV, SI [1 ]
机构
[1] ACAD SCI USSR,INST SEMICOND PHYS,NOVOSIBIRSK 630090,USSR
关键词
D O I
10.1016/0022-0248(89)90650-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:899 / 905
页数:7
相关论文
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