共 20 条
- [1] MONOLAYER AND BILAYER GROWTH ON GE(111) AND SI(111) [J]. SURFACE SCIENCE, 1987, 188 (03) : 391 - 401
- [3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL-GROWTH ON SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1251 - 1258
- [7] Henzler M., 1977, Electron spectroscopy for surface analysis, P117
- [9] THE APPLICATION OF RHEED INTENSITY EFFECTS TO INTERRUPTED GROWTH AND INTERFACE FORMATION DURING MBE GROWTH OF GAAS/(AL, GA)AS STRUCTURES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (03): : 255 - 260
- [10] Lagally M.G., 1988, REFLECTION HIGH ENER, P139