ANISOTROPY AND LATERAL HOMOGENEITY OF INP-MASS TRANSPORT

被引：4

作者：

HANSEN, K

PEINER, E

SCHLACHETZKI, A

BURKHARD, H

机构：

[1] Institut für Halbleitertechnik, TU Braunschweig, Braunschweig, D-W-3300

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8B期

关键词：

INP-MASS TRANSPORT; (111)B-INP PROTECTION WAFER; ORIENTATION DEPENDENCE; LATERAL HOMOGENEITY; WAVELENGTH-SELECTIVE TRANSMISSION-INFRARED (IR) MICROSCOPY;

D O I：

10.1143/JJAP.31.L1153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP-mass transport performed in a conventional liquid-phase epitaxial (LPE) system using (111)B-InP protection wafers was investigated by scanning-electron microscopy and wavelength-selective transmission-infrared (IR) microscopy. Refilling of undercut-etched mesa stripes of a length of 2 mm was found to be laterally homogeneous within +/- 6% when the process temperature was 721-degrees-C. In the [100] direction, an enhanced growth rate compared to that in the [110] direction was found. This anisotropy tended to disappear when the distance from the wafer to the protection wafer was reduced.

引用

收藏

页码：L1153 / L1156

页数：4

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