A NEGATIVE PHOTORESIST (TAS) FOR A BI-LAYER RESIST SYSTEM

被引：14

作者：

SAIGO, K ^{[1
]}

OHNISHI, Y ^{[1
]}

SUZUKI, M ^{[1
]}

GOKAN, H ^{[1
]}

机构：

[1] NEC CORP,MICROELECTR RES LABS,KAWASAKI 213,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：331 / 334

页数：4

共 10 条

[1]

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[2]

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[3]

MACDONALD SA, 1983, INT S ELECTRON ION P

[4]

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[5] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J].

MORAN, JM ;

MAYDAN, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1620-1624

[6] CO-POLYMERS OF TRIMETHYLSILYLSTYRENE WITH CHLOROMETHYLSTYRENE FOR A BI-LAYER RESIST SYSTEM [J].

SUZUKI, M ;

SAIGO, K ;

GOKAN, H ;

OHNISHI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) :1962-1964

[7]

TANAKA A, 1984, POLYM PREPR AM CHEM, V25, P309

[8] ORGANO-SILICON MONOMERS FOR PLASMA-DEVELOPED X-RAY RESISTS [J].

TAYLOR, GN ;

WOLF, TM ;

MORAN, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :872-880

[9]

1960, Patent No. 2940853

[10]

1958, Patent No. 2852396

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