IMPROVEMENTS IN MBE GROWN ALXGA1-XAS/GAAS SINGLE QUANTUM WELL STRUCTURES RESULTING FROM DIMERIC ARSENIC

被引：5

作者：

FISCHER, R

SUN, YL

MASSELINK, WT

KLEM, J

KLEIN, MV

MORKOC, H

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期

关键词：

D O I：

10.1143/JJAP.23.L126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L126 / L128

页数：3

共 11 条

[1] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS [J].

DRUMMOND, TJ ;

KLEM, J ;

ARNOLD, D ;

FISCHER, R ;

THORNE, RE ;

LYONS, WG ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :615-617

[2]

DUGGAN G, 1982, J PHYS, V5, P129

[3]

FISCHER R, APPL PHYS LETT

[4] USE OF A GAAS SMOOTHING LAYER TO IMPROVE THE HETEROINTERFACE OF GAAS/ALXGA1-XAS FIELD-EFFECT TRANSISTORS [J].

KOPP, W ;

SU, SL ;

FISCHER, R ;

LYONS, WG ;

THORNE, RE ;

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1982, 41 (06) :563-565

[5] PHOTO-LUMINESCENCE STUDY OF THE INCORPORATION OF SILICON IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MENDEZ, EE ;

HEIBLUM, M ;

FISHER, R ;

KLEM, J ;

THORNE, RE ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4202-4204

[6] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J].

MILLER, RC ;

TSANG, WT ;

MUNTEANU, O .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :374-376

[7] EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS [J].

MILLER, RC ;

GOSSARD, AC ;

TSANG, WT .

PHYSICA B & C, 1983, 117 (MAR) :714-716

[8] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

DRUMMOND, TJ ;

FISCHER, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1030-1033

[9]

MORKOC H, UNPUB APPL PHYS LETT

[10]

SU SL, J APPL PHYS

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