STUDY OF SUBLATTICE ORIENTATION OF GAAS ON GE

被引：16

作者：

STRITE, S ^{[1
]}

BISWAS, D ^{[1
]}

ADOMI, K ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High crystalline quality GaAs/Ge/GaAs heterostructures have been grown on both straight and slightly misoriented GaAs(100) substrates by molecular beam epitaxy. High-energy electron diffraction was used to study the sublattice rotation of GaAs on epitaxial Ge dependent on the use of a Ga or As prelayer. On straight (100) substrates, a Ga prelayer was observed to rotate the GaAs surface reconstruction by π/2 while an As prelayer preserved the GaAs orientation observed prior to Ge deposition. No rotation of the surface was observed on substrates tilted 4°towards [011]. We present a growth model to explain these results.

引用

页码：1609 / 1612

页数：4

共 10 条

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