ANTIPHASE DOMAIN FREE GROWTH OF GAAS ON GE IN GAAS/GE/GAAS HETEROSTRUCTURES

被引：48

作者：

STRITE, S ^{[1
]}

BISWAS, D ^{[1
]}

KUMAR, NS ^{[1
]}

FRADKIN, M ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 03期

关键词：

D O I：

10.1063/1.102818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs/Ge/GaAs heterostructures have been grown by molecular beam epitaxy on GaAs substrates with nominally (100) and (100) tilted 4 °towards [01̄1] orientations. High-energy electron diffraction is used to study the antiphase boundaries of the GaAs grown on epitaxial Ge. We have observed the annihilation of GaAs antiphase boundaries on Ge grown on (100) GaAs substrates. GaAs on Ge grown on tilted substrates is observed to be free of antiphase domains.

引用

页码：244 / 246

页数：3

共 12 条

[1] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES
BAUER, RS
MIKKELSEN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 491 - 497
[2] PNP GAAS/GE/GE PHOTOTRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY - IMPLICATIONS FOR BIPOLAR AND HOT-ELECTRON TRANSISTORS
CHAND, N
KLEM, J
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 484 - 486
[3] INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY
CHANG, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1253 - 1255
[4] ANTIPHASE BOUNDARIES IN GAAS
CHO, NH
DECOOMAN, BC
CARTER, CB
FLETCHER, R
WAGNER, DK
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 879 - 881
[5] SELF-ANNIHILATION OF ANTIPHASE BOUNDARY IN GAAS ON SI(100) GROWN BY MOLECULAR-BEAM EPITAXY
KAWABE, M
UEDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L944 - L946
[6] POLAR-ON-NONPOLAR EPITAXY
KROEMER, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 193 - 204
[7] MIZIGUCHI K, 1986, J CRYST GROWTH, V77, P509
[8] SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS
NEAVE, JH
LARSEN, PK
JOYCE, BA
GOWERS, JP
VANDERVEEN, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 668 - 674
[9] OHMACHI Y, 1986, 67 MAT RES SOC S P P, P66
[10] NUCLEATION AND GROWTH OF GAAS ON GE AND THE STRUCTURE OF ANTIPHASE BOUNDARIES
PETROFF, PM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 874 - 877

← 1 2 →