MICROPLASMA INTERACTION IN SILICON P-N JUNCTIONS

被引：11

作者：

HAITZ, RH

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 06期

关键词：

D O I：

10.1016/0038-1101(64)90041-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：439 / &

共 15 条

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[5] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].

HAITZ, RH ;

GOETZBERGER, A ;

SCARLETT, RM ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&

[6]

HAITZ RH, 1962, B AM PHYS SOC, V7, P603

[7]

HAITZ RH, 1964, J APPL PHYS, V35

[8]

HAITZ RH, 1962, B AM PHYS SOC, V7, P536

[9] THEORY OF MICROPLASMA INSTABILITY IN SILICON [J].

MCINTYRE, RJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :983-&

[10] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

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